Silicon carbide (SiC) foam, available from Goodfellow, reportedly provides the exceptional hardness, high-temperature durability and performance of solid silicon carbide, but in an extremely lightweight and versatile foam structure. This combination of properties is highly valued in a range of industries, including aerospace, defense and semiconductor manufacturing.

 

The matrix of cells and ligaments of silicon carbide foam is completely repeatable, regular and uniform throughout the material, yielding a rigid, highly porous and permeable structure with a controlled density of metal per unit volume. Characteristics of SiC foam include:

• Exceptional hardness (Mohs 9) and performance; outstanding resistance to scratches, wear and corrosion 

• Structural stability at high temperatures; can operate up to 2,200?C 

• High thermal and electrical conductivity, unlike most other ceramics 

• Low thermal expansion; excellent thermal shock properties 

• High surface area-to-volume ratio; very lightweight 

• Low flow resistance; high filtration efficiency 

 

Both the toughness of SiC and the porosity/high surface area of the foam structure offer a number of advantages. Applications include high-temperature filters, rocket nozzles, heat-shielding elements, heat exchangers, gas diffusers, porous electrodes and absorbers of electromagnetic radiation. 

 

Silicon carbide foam is available from Goodfellow stock in a standard pore size of 24 pores per centimeter (60 ppi), with a bulk density of 0.29 g.cm-3, a porosity of 91% and a thickness of 10 mm. However, other porosities, densities and dimensions may be available upon request.

 

For more information, visit www.goodfellowusa.com.